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先端gan hemtデバイス技術 fujitsu 先端gan hemtデバイス技術 ま え が き 窒化ガリウム(gan)高電子移動度トランジス タ(hemt:high electron mobility transistor) gs b the gs b is an enhancement mode gan on silicon power transistor the properties of gan allow for high current high voltage breakdown high switching
 

先端gan hemtデバイス技術 fujitsu 先端gan hemtデバイス技術 ま え が き 窒化ガリウム(gan)高電子移動度トランジス タ(hemt:high electron mobility transistor) gs b the gs b is an enhancement mode gan on silicon power transistor the properties of gan allow for high current high voltage breakdown high switching frequency and high temperature operation rf power transistors gan on si cw ma ma is the world’s only provider of gan on si technology for rf applications we offer a broad range of continuous wave cw gan on si rf power transistor products as discrete devices and modules designed to operate from dc to 6 ghz


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