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a pact transport and charge model for gan based high a pact transport and charge model for gan based high electron mobility transistors for rf applications by ujwal radhakrishna submitted to the department transistor the first high frequency transistor was the surface barrier germanium transistor developed by philco in 1953 capable of operating up to 60 mhz these were
 

a pact transport and charge model for gan based high a pact transport and charge model for gan based high electron mobility transistors for rf applications by ujwal radhakrishna submitted to the department of electrical engineering and puter transistor a transistor is a semiconductor device used to amplify or switch electronic signals and electrical power it is posed of semiconductor material usually with at least three terminals for connection to an external circuit the path to new high performance transistors the electronics industry expects a novel high performance transistor made of gallium nitride to offer considerable advantages over present day high frequency transistors yet many fundamental


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